2SD2675TL

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Mfr.Part #
2SD2675TL
Manufacturer
ROHM Semiconductor
Package / Case
SC-96
Datasheet
Download
Description
TRANS NPN 30V 1A TSMT3
Stock
1,707
In Stock :
1,707

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
350mV @ 25mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
270 @ 100mA, 2V
Power - Max :
500 mW
Product Status :
Active
Mounting Type :
Surface Mount
Transistor Type :
NPN
Current - Collector (Ic) (Max) :
1 A
Supplier Device Package :
TSMT3
Current - Collector Cutoff (Max) :
100nA (ICBO)
Voltage - Collector Emitter Breakdown (Max) :
30 V
Package / Case :
SC-96
Frequency - Transition :
320MHz
Operating Temperature :
150°C (TJ)
Datasheets
2SD2675TL
VESS Electronics offers Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SD2675TL, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Mounting Type:Surface Mount, Package / Case:SC-96, Operating Temperature:150°C (TJ), 2SD2675TL pinout, 2SD2675TL datasheet PDF, 2SD2675TL amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor 2SD2675TL ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-96 Tape & Reel (TR) Surface Mount

2SD2675TL Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 270 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 120mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 25mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 1A in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 320MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

2SD2675TL Features


the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 320MHz


2SD2675TL Applications


There are a lot of ROHM Semiconductor
2SD2675TL applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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