2SD2012-BP
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- Mfr.Part #
- 2SD2012-BP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220AB
- Stock
- 32,469
- In Stock ：
- 32,469
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-220AB
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA, 5V
- Power - Max :
- 2 W
- Current - Collector Cutoff (Max) :
- 100µA (ICBO)
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Frequency - Transition :
- 3MHz
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max) :
- 3 A
- Product Status :
- Obsolete
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Datasheets
- 2SD2012-BP
NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Through Hole
2SD2012-BP Overview
In this device, the DC current gain is 100 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 200mA, 2A.3MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 60V.
2SD2012-BP Features
the DC current gain for this device is 100 @ 500mA 5V
the vce saturation(Max) is 1V @ 200mA, 2A
a transition frequency of 3MHz
2SD2012-BP Applications
There are a lot of Micro Commercial Co
2SD2012-BP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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