2SD2014
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- Mfr.Part #
- 2SD2014
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A TO220F
- Stock
- 1,974
- In Stock ：
- 1,974
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Status :
- Active
- Current - Collector Cutoff (Max) :
- 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 3A, 2V
- Operating Temperature :
- 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 3mA, 3A
- Power - Max :
- 25 W
- Frequency - Transition :
- 75MHz
- Transistor Type :
- NPN - Darlington
- Package / Case :
- TO-220-3 Full Pack
- Supplier Device Package :
- TO-220F
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Current - Collector (Ic) (Max) :
- 4 A
- Datasheets
- 2SD2014
NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Bulk Through Hole
2SD2014 Overview
This device has a DC current gain of 2000 @ 3A 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 75MHz.Single BJT transistor comes in a supplier device package of TO-220F.Maximum collector-emitter voltage can be set to 80 V.Detection of Collector Emitter Breakdown at 80 V maximal voltage is present.The maximum collector current is 4A volts.
2SD2014 Features
the DC current gain for this device is 2000 @ 3A 2V
the vce saturation(Max) is 1.5V @ 3mA, 3A
a transition frequency of 75MHz
the supplier device package of TO-220F
2SD2014 Applications
There are a lot of Sanken
2SD2014 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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