2SD2015
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- Mfr.Part #
- 2SD2015
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 4A TO220F
- Stock
- 1,751
- In Stock ：
- 1,751
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Power - Max :
- 25 W
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- Package / Case :
- TO-220-3 Full Pack
- Product Status :
- Active
- Current - Collector Cutoff (Max) :
- 10µA (ICBO)
- Operating Temperature :
- 150°C (TJ)
- Transistor Type :
- NPN - Darlington
- Supplier Device Package :
- TO-220F
- Current - Collector (Ic) (Max) :
- 4 A
- Frequency - Transition :
- 40MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 2mA, 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 2A, 2V
- Datasheets
- 2SD2015
NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Bulk Through Hole
2SD2015 Overview
DC current gain in this device equals 2000 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 2mA, 2A.As a result, the part has a transition frequency of 40MHz.Product comes in TO-220F supplier package.Maximal collector-emitter voltage can be set at 120 V.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 4A volts.
2SD2015 Features
the DC current gain for this device is 2000 @ 2A 2V
the vce saturation(Max) is 1.5V @ 2mA, 2A
a transition frequency of 40MHz
the supplier device package of TO-220F
2SD2015 Applications
There are a lot of Sanken
2SD2015 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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