2SD2012
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- Mfr.Part #
- 2SD2012
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220F
- Stock
- 18,761
- In Stock ：
- 18,761
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 3 A
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Operating Temperature :
- 150°C (TJ)
- Transistor Type :
- NPN
- Product Status :
- Obsolete
- Current - Collector Cutoff (Max) :
- 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA, 5V
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 3MHz
- Power - Max :
- 25 W
- Package / Case :
- TO-220-3 Full Pack
- Supplier Device Package :
- TO-220F
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Datasheets
- 2SD2012
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
2SD2012 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 1V @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 3A volts can be achieved.
2SD2012 Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 3MHz
2SD2012 Applications
There are a lot of STMicroelectronics
2SD2012 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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