FDPC8016S
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- Mfr.Part #
- FDPC8016S
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 8PWRCLIP
- Stock
- 8,922
- In Stock ：
- 8,922
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mounting Type :
- Surface Mount
- FET Feature :
- Logic Level Gate
- Power - Max :
- 2.1W, 2.3W
- Package / Case :
- 8-PowerWDFN
- Product Status :
- Active
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 3.8mOhm @ 20A, 10V
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Drain to Source Voltage (Vdss) :
- 25V
- Supplier Device Package :
- Power Clip 56
- Current - Continuous Drain (Id) @ 25°C :
- 20A, 35A
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2375pF @ 13V
- Datasheets
- FDPC8016S
FDPC8016S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC8016S Description
In a dual package, this device contains two specialized N-Channel MOSFETs. To make synchronous buck converter placement and routing simple, the switch node has been internally connected. To offer maximum power efficiency, the control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been created.
FDPC8016S Features
Maximum RDS(on) at VGS = 10 V, ID = 35 A is 1.4 m.
? Maximum RDS(on) at VGS = 4.5 V, ID = 32 A is 1.7 m.
? Reduced Rise/Fall Times Due to Low Inductance Packaging Lead to Lower Switching Losses
? Optimal Layout for Lower Circuit Inductance and Reduced Switch Node Ringing is Made Possible by MOSFET Integration
? These devices are RoHS compliant and Pb-free.
FDPC8016S Applications
? Computer
? Interactions
? Multi-Use Point of Load
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