FDPC8014S

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Mfr.Part #
FDPC8014S
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET 2N-CH 25V 8PWRCLIP
Stock
14,815
In Stock :
14,815

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Supplier Device Package :
Power Clip 56
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Rds On (Max) @ Id, Vgs :
3.8mOhm @ 20A, 10V
FET Type :
2 N-Channel (Dual) Asymmetrical
Mounting Type :
Surface Mount
Product Status :
Last Time Buy
Package / Case :
8-PowerWDFN
FET Feature :
Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds :
2375pF @ 13V
Power - Max :
2.1W, 2.3W
Current - Continuous Drain (Id) @ 25°C :
20A, 41A
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Operating Temperature :
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) :
25V
Datasheets
FDPC8014S
VESS Electronics offers Transistors - FETs, MOSFETs - Arrays onsemi FDPC8014S, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Mounting Type:Surface Mount, Package / Case:8-PowerWDFN, Operating Temperature:-55°C ~ 150°C (TJ), FDPC8014S pinout, FDPC8014S datasheet PDF, FDPC8014S amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDPC8014S ,we also present a selection of SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

FDPC8014S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDPC8014S         Description


  The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous SyncFETTM devices (Q2) is designed to provide optimal power efficiency.

 

FDPC8014S      Features

 

Q1 N-Channel

Max. RDS(on) = 3.8 m|? at VGS = 10 V, ID = 20 A

Max. RDS(on) = 4.7 m|? at VGS = 4.5 V, ID = 18 A

Q2 N-Channel

Max. RDS(on) = 1.2 m|? at VGS = 10 V, ID = 41 A

Max. RDS(on) = 1.4 m|? at VGS = 4.5 V, ID = 37 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

RoHS Compliant


FDPC8014S                Applications


Computing

Communications

General Purpose Point of Load

 





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