FDPC8013S
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- Mfr.Part #
- FDPC8013S
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 13A/26A 3.3MM
- Stock
- 4,740
- In Stock ：
- 4,740
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Rds On (Max) @ Id, Vgs :
- 6.4mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- FET Feature :
- Logic Level Gate
- Input Capacitance (Ciss) (Max) @ Vds :
- 827pF @ 15V
- Power - Max :
- 800mW, 900mW
- FET Type :
- 2 N-Channel (Dual)
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 13A, 26A
- Supplier Device Package :
- Powerclip-33
- Drain to Source Voltage (Vdss) :
- 30V
- Package / Case :
- 8-PowerWDFN
- Datasheets
- FDPC8013S
FDPC8013S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC8013S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous field effect transistor (Q2) is designed to provide optimal power efficiency.
FDPC8013S Features
Q1 N-Channel
Max. RDS(on) = 9.6 m|? at VGS = 4.5 V, ID = 10 A
Q2 N-Channel
Max. RDS(on) = 2.7 m|? at VGS = 4.5 V, ID = 22 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8013S Applications
Distribution
Other Wired Communications
Computing
Communications
General Purpose Point of Load
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