STD35NF06L
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- Mfr.Part #
- STD35NF06L
- Manufacturer
- UTD Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TO-252 MOSFETS ROHS
- Stock
- 40,950
- In Stock ：
- 40,950
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- Manufacturer :
- UTD Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 20mOhm @ 30A, 10V
- Technology :
- MOSFET (Metal Oxide)
- Gate Charge (Qg) (Max) @ Vgs :
- 60 nC @ 10 V
- Supplier Device Package :
- TO-252 (DPAK)
- FET Feature :
- -
- Power Dissipation (Max) :
- 105W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300 pF @ 25 V
- Product Status :
- Active
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 35A (Tc)
- Drain to Source Voltage (Vdss) :
- 60 V
- Datasheets
- STD35NF06L
N-Channel Tape & Reel (TR) 17m Ω @ 17.5A, 10V ±16V 1700pF @ 25V 33nC @ 4.5V TO-252-3, DPak (2 Leads + Tab), SC-63
The STD35NF06LT4 is a 60V N-channel Power MOSFET developed using unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the MOSFET suitable for use as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer applications and applications with low gate charge driving requirements.
STD35NF06LT4 Features
Low threshold drive
Gate charge minimized
High peak power
High ruggedness capability
STD35NF06LT4 Applications
Industrial
Communications & Networking,
Computers & Computer Peripherals
Automotive
Switching application
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