STD30NE06LT4
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- Mfr.Part #
- STD30NE06LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 30A DPAK
- Stock
- 20,538
- In Stock ：
- 20,538
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- 175°C (TJ)
- Vgs (Max) :
- ±20V
- Power Dissipation (Max) :
- 55W (Tc)
- Technology :
- MOSFET (Metal Oxide)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Voltage (Vdss) :
- 60 V
- Gate Charge (Qg) (Max) @ Vgs :
- 41 nC @ 5 V
- Current - Continuous Drain (Id) @ 25°C :
- 30A (Tc)
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- DPAK
- FET Feature :
- -
- Rds On (Max) @ Id, Vgs :
- 28mOhm @ 15A, 10V
- Product Status :
- Obsolete
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 2370 pF @ 25 V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Drive Voltage (Max Rds On, Min Rds On) :
- 5V, 10V
- Datasheets
- STD30NE06LT4
N-Channel Tape & Reel (TR) 28m Ω @ 15A, 10V ±20V 2370pF @ 25V 41nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
STD30NE06LT4 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2370pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.There is a peak drain current of 120A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (5V 10V).
STD30NE06LT4 Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 60V voltage
based on its rated peak drain current 120A.
STD30NE06LT4 Applications
There are a lot of STMicroelectronics
STD30NE06LT4 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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