STD30N10F7
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- Mfr.Part #
- STD30N10F7
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 32A DPAK
- Stock
- 30,446
- In Stock ：
- 30,446
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- DPAK
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Technology :
- MOSFET (Metal Oxide)
- FET Feature :
- -
- Product Status :
- Obsolete
- Vgs(th) (Max) @ Id :
- 4.5V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 32A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1270 pF @ 50 V
- Drain to Source Voltage (Vdss) :
- 100 V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 50W (Tc)
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 24mOhm @ 16A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 19 nC @ 10 V
- Datasheets
- STD30N10F7
N-Channel Tape & Reel (TR) 24m Ω @ 16A, 10V 1270pF @ 50V 19nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
STD30N10F7 Description
The STD30N10F7 N-channel Power MOSFET is based on STripFETTM F7 technology, which features an improved trench gate structure that reduces internal capacitance and gate charge for quicker and more efficient switching.
STD30N10F7 Features
-
High avalanche ruggedness
-
Excellent FoM (figure of merit)
-
Low Crss/Ciss ratio for EMI immunity
-
Among the lowest RDS(on) on the market
STD30N10F7 Applications
-
Medical
-
Switching applications
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