BDV65B

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Mfr.Part #
BDV65B
Manufacturer
onsemi
Package / Case
TO-218-3
Datasheet
Download
Description
TRANS NPN DARL 100V 10A SOT93
Stock
16,388
In Stock :
16,388

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Product Status :
Obsolete
Current - Collector (Ic) (Max) :
10 A
Vce Saturation (Max) @ Ib, Ic :
2V @ 20mA, 5A
Package / Case :
TO-218-3
Power - Max :
125 W
Voltage - Collector Emitter Breakdown (Max) :
100 V
Frequency - Transition :
-
Mounting Type :
Through Hole
Transistor Type :
NPN - Darlington
Supplier Device Package :
SOT-93
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 5A, 4V
Operating Temperature :
-65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max) :
1mA
Datasheets
BDV65B
VESS Electronics offers Transistors - Bipolar (BJT) - Single onsemi BDV65B, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Package / Case:TO-218-3, Mounting Type:Through Hole, Operating Temperature:-65°C ~ 150°C (TJ), BDV65B pinout, BDV65B datasheet PDF, BDV65B amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDV65B ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

NPN - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole

BDV65BG Overview


This device has a DC current gain of 1000 @ 5A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2V @ 20mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 10A volts is possible.

BDV65BG Features


the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 10A


BDV65BG Applications


There are a lot of ON Semiconductor
BDV65BG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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