BDV64B

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Mfr.Part #
BDV64B
Manufacturer
Central Semiconductor
Package / Case
TO-218-3
Datasheet
Download
Description
TRANS PNP 100V 12A TO218
Stock
44,709
In Stock :
44,709

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
12 A
Package / Case :
TO-218-3
Supplier Device Package :
TO-218
Power - Max :
125 W
Current - Collector Cutoff (Max) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 5A, 4V
Voltage - Collector Emitter Breakdown (Max) :
100 V
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
-
Product Status :
Obsolete
Operating Temperature :
-
Frequency - Transition :
60MHz
Mounting Type :
Through Hole
Datasheets
BDV64B
VESS Electronics offers Transistors - Bipolar (BJT) - Single Central Semiconductor BDV64B, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Package / Case:TO-218-3, Operating Temperature:-, Mounting Type:Through Hole, BDV64B pinout, BDV64B datasheet PDF, BDV64B amp .Beyond Transistors - Bipolar (BJT) - Single Central Semiconductor BDV64B ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

PNP - Darlington -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole

BDV64BG Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 5A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 20mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -10A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.1MHz.During maximum operation, collector current can be as low as 10A volts.

BDV64BG Features


the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 20mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 0.1MHz


BDV64BG Applications


There are a lot of ON Semiconductor
BDV64BG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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