BDV65

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Mfr.Part #
BDV65
Manufacturer
Central Semiconductor
Package / Case
TO-218-3
Datasheet
Download
Description
TRANS NPN 60V 12A TO218
Stock
36,491
In Stock :
36,491

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Manufacturer :
Central Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Supplier Device Package :
TO-218
Package / Case :
TO-218-3
Vce Saturation (Max) @ Ib, Ic :
-
Voltage - Collector Emitter Breakdown (Max) :
60 V
Frequency - Transition :
60MHz
Power - Max :
125 W
Transistor Type :
NPN
Current - Collector Cutoff (Max) :
-
Product Status :
Obsolete
Operating Temperature :
-
Mounting Type :
Through Hole
Current - Collector (Ic) (Max) :
12 A
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 5A, 4V
Datasheets
BDV65
VESS Electronics offers Transistors - Bipolar (BJT) - Single Central Semiconductor BDV65, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Package / Case:TO-218-3, Operating Temperature:-, Mounting Type:Through Hole, BDV65 pinout, BDV65 datasheet PDF, BDV65 amp .Beyond Transistors - Bipolar (BJT) - Single Central Semiconductor BDV65 ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

NPN 1 Elements 3 Terminations SILICON NPN TO-218-3 Bulk Through Hole

BDV65 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 5A 4V.The part has a transition frequency of 60MHz.Device displays Collector Emitter Breakdown (60V maximal voltage).

BDV65 Features


the DC current gain for this device is 1000 @ 5A 4V
a transition frequency of 60MHz


BDV65 Applications


There are a lot of Central Semiconductor Corp
BDV65 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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