2SA2013-TD-E

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Mfr.Part #
2SA2013-TD-E
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 50V 4A PCP
Stock
790
In Stock :
790

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-243AA
Operating Temperature :
150°C (TJ)
Power - Max :
3.5 W
Supplier Device Package :
PCP
Transistor Type :
PNP
Product Status :
Active
Current - Collector (Ic) (Max) :
4 A
Frequency - Transition :
400MHz
Current - Collector Cutoff (Max) :
1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic :
340mV @ 100mA, 2A
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA, 2V
Voltage - Collector Emitter Breakdown (Max) :
50 V
Mounting Type :
Surface Mount
Datasheets
2SA2013-TD-E
VESS Electronics offers Transistors - Bipolar (BJT) - Single onsemi 2SA2013-TD-E, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Package / Case:TO-243AA, Operating Temperature:150°C (TJ), Mounting Type:Surface Mount, 2SA2013-TD-E pinout, 2SA2013-TD-E datasheet PDF, 2SA2013-TD-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA2013-TD-E ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

2SA2013-TD-E Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 340mV @ 100mA, 2A.The emitter base voltage can be kept at -6V for high efficiency.The part has a transition frequency of 360MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.

2SA2013-TD-E Features


the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 340mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 360MHz


2SA2013-TD-E Applications


There are a lot of ON Semiconductor
2SA2013-TD-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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