2SA2012-TD-E
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- Mfr.Part #
- 2SA2012-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5A PCP
- Stock
- 17,267
- In Stock ：
- 17,267
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 3.5 W
- Frequency - Transition :
- 420MHz
- Supplier Device Package :
- PCP
- Operating Temperature :
- 150°C (TJ)
- Product Status :
- Last Time Buy
- Vce Saturation (Max) @ Ib, Ic :
- 210mV @ 30mA, 1.5A
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Voltage - Collector Emitter Breakdown (Max) :
- 30 V
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 5 A
- Package / Case :
- TO-243AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA, 2V
- Datasheets
- 2SA2012-TD-E
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA2012-TD-E Overview
This device has a DC current gain of 200 @ 500mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -260mV.A VCE saturation (Max) of 210mV @ 30mA, 1.5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 350MHz.A maximum collector current of 5A volts is possible.
2SA2012-TD-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 210mV @ 30mA, 1.5A
the emitter base voltage is kept at 5V
a transition frequency of 350MHz
2SA2012-TD-E Applications
There are a lot of ON Semiconductor
2SA2012-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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