2SA2007E
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- Mfr.Part #
- 2SA2007E
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 60V 12A TO220FN
- Stock
- 398
- In Stock ：
- 398
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 400mA, 8A
- Frequency - Transition :
- 80MHz
- Supplier Device Package :
- TO-220FN
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Power - Max :
- 25 W
- Package / Case :
- TO-220-3 Full Pack
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 320 @ 2A, 2V
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 10µA (ICBO)
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- 12 A
- Datasheets
- 2SA2007E
PNP 150°C TJ 10μA ICBO TO-220-3 Full Pack Bulk Through Hole
2SA2007E Overview
In this device, the DC current gain is 320 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -300mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 400mA, 8A.Maintaining the continuous collector voltage at -12A is essential for high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.Maximum collector currents can be below 12A volts.
2SA2007E Features
the DC current gain for this device is 320 @ 2A 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 500mV @ 400mA, 8A
the emitter base voltage is kept at -5V
2SA2007E Applications
There are a lot of ROHM Semiconductor
2SA2007E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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