IRF640NPBF Specification, Model, Datasheet

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.

Symbol

Footprint

3D-Model

Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Ease of Paralleling

Simple Drive Requirements

Lead-Free

Inverters

DC motors

SMPS

Load switches

Battery applications

IRFZ44N: This is a popular N-channel MOSFET with a voltage rating of 55V and a current rating of 50A. It has similar characteristics to the IRF640NPBF and can be used as a replacement in many applications.

IRF3205: This is another N-channel MOSFET with a voltage rating of 55V and a current rating of 110A. It has a lower on-resistance and higher current capability compared to the IRF640NPBF, making it suitable for high-power applications.

IRF9540N: This is a P-channel MOSFET with a voltage rating of 100V and a current rating of 23A. It has complementary characteristics to the IRF640NPBF and can be used as an alternative when a P-channel MOSFET is required.

IRF1405: This is a high-power N-channel MOSFET with a voltage rating of 55V and a current rating of 169A. It has a lower on-resistance and higher current capability compared to the IRF640NPBF, making it suitable for high-power and high-efficiency applications.