SS8050DTA

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Mfr.Part #
SS8050DTA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet
Download
Description
TRANS NPN 25V 1.5A TO92-3
Stock
22,256
In Stock :
22,256

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Voltage - Collector Emitter Breakdown (Max) :
25 V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 80mA, 800mA
Operating Temperature :
150°C (TJ)
Transistor Type :
NPN
Frequency - Transition :
100MHz
Product Status :
Active
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Current - Collector (Ic) (Max) :
1.5 A
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA, 1V
Supplier Device Package :
TO-92-3
Mounting Type :
Through Hole
Power - Max :
1 W
Datasheets
SS8050DTA
VESS Electronics offers Transistors - Bipolar (BJT) - Single onsemi SS8050DTA, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Operating Temperature:150°C (TJ), Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type:Through Hole, SS8050DTA pinout, SS8050DTA datasheet PDF, SS8050DTA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SS8050DTA ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

SS8050DTA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 80mA, 800mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 190MHz.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.

SS8050DTA Features


the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz


SS8050DTA Applications


There are a lot of ON Semiconductor
SS8050DTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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