SS8050CTA

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Mfr.Part #
SS8050CTA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet
Download
Description
TRANS NPN 25V 1.5A TO92-3
Stock
37,292
In Stock :
37,292

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
500mV @ 80mA, 800mA
Operating Temperature :
150°C (TJ)
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
25 V
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 100mA, 1V
Frequency - Transition :
100MHz
Current - Collector Cutoff (Max) :
100nA (ICBO)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package :
TO-92-3
Mounting Type :
Through Hole
Product Status :
Active
Power - Max :
1 W
Current - Collector (Ic) (Max) :
1.5 A
Datasheets
SS8050CTA
VESS Electronics offers Transistors - Bipolar (BJT) - Single onsemi SS8050CTA, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Operating Temperature:150°C (TJ), Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type:Through Hole, SS8050CTA pinout, SS8050CTA datasheet PDF, SS8050CTA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SS8050CTA ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

SS8050CTA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 80mA, 800mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 190MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.

SS8050CTA Features


the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz


SS8050CTA Applications


There are a lot of ON Semiconductor
SS8050CTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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