IPB60R600CP

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Mfr.Part #
IPB60R600CP
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
6,970
In Stock :
6,970

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
3.5V @ 220µA
Supplier Device Package :
PG-TO263-3-2
Operating Temperature :
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C :
6.1A (Tc)
Vgs (Max) :
±20V
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds :
550 pF @ 100 V
Product Status :
Active
Technology :
MOSFET (Metal Oxide)
Power Dissipation (Max) :
60W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
27 nC @ 10 V
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
600mOhm @ 3.3A, 10V
FET Feature :
-
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
Datasheets
IPB60R600CP
VESS Electronics offers Transistors - FETs, MOSFETs - Single Infineon Technologies IPB60R600CP, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, IPB60R600CP pinout, IPB60R600CP datasheet PDF, IPB60R600CP amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB60R600CP ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

Si N-Channel MouseReel 600mOhm @ 3.3A, 10V ±20V 550 pF @ 100 V 27 nC @ 10 V 600 V TO-263-3

IPB60R600CP Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 550 pF @ 100 V.This device has a continuous drain current (ID) of [6.1 A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600 V, the drain-source breakdown voltage is 600 V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 75 ns.MOSFETs have 600 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20 V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3 V.In order to operate this transistor, a voltage of 600 V is needed from the drain to the source (Vdss).

IPB60R600CP Features


a continuous drain current (ID) of 6.1 A
a drain-to-source breakdown voltage of 600 V voltage
the turn-off delay time is 75 ns
single MOSFETs transistor is 600 mΩ
a threshold voltage of 3 V
a 600 V drain to source voltage (Vdss)


IPB60R600CP Applications


There are a lot of Infineon
IPB60R600CP applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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