IPB60R080P7ATMA1

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Mfr.Part #
IPB60R080P7ATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 650V 37A D2PAK
Stock
2,391
In Stock :
2,391

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
650 V
Input Capacitance (Ciss) (Max) @ Vds :
2180 pF @ 400 V
Operating Temperature :
-55°C ~ 150°C (TJ)
Technology :
MOSFET (Metal Oxide)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On) :
10V
Vgs (Max) :
±20V
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
80mOhm @ 11.8A, 10V
Supplier Device Package :
PG-TO263-3
FET Feature :
-
Product Status :
Active
Current - Continuous Drain (Id) @ 25°C :
37A (Tc)
Gate Charge (Qg) (Max) @ Vgs :
51 nC @ 10 V
Power Dissipation (Max) :
129W (Tc)
Vgs(th) (Max) @ Id :
4V @ 590µA
Datasheets
IPB60R080P7ATMA1
VESS Electronics offers Transistors - FETs, MOSFETs - Single Infineon Technologies IPB60R080P7ATMA1, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, IPB60R080P7ATMA1 pinout, IPB60R080P7ATMA1 datasheet PDF, IPB60R080P7ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB60R080P7ATMA1 ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Tape & Reel (TR) 80m Ω @ 11.8A, 10V ±20V 2180pF @ 400V 51nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB60R080P7ATMA1 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 118 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2180pF @ 400V maximal input capacitance.As far as peak drain current is concerned, its maximum pulsed current is 110A.The DS breakdown voltage should be maintained above 600V to maintain normal operation.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPB60R080P7ATMA1 Features


the avalanche energy rating (Eas) is 118 mJ
based on its rated peak drain current 110A.
a 650V drain to source voltage (Vdss)


IPB60R080P7ATMA1 Applications


There are a lot of Infineon Technologies
IPB60R080P7ATMA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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