IPB60R210CFD7ATMA1
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- Mfr.Part #
- IPB60R210CFD7ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 12A TO263-3-2
- Stock
- 29,142
- In Stock ：
- 29,142
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 250µA
- Vgs (Max) :
- ±20V
- FET Feature :
- -
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) :
- 650 V
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Current - Continuous Drain (Id) @ 25°C :
- 12A (Tc)
- Technology :
- MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 210mOhm @ 4.9A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 23 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1015 pF @ 400 V
- Supplier Device Package :
- PG-TO263-3-2
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 64W (Tc)
- Product Status :
- Active
- Datasheets
- IPB60R210CFD7ATMA1
N-Channel 210m Ω @ 4.9A, 10V ±20V 1015pF @ 400V 23nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB60R210CFD7ATMA1 Overview
A device's maximal input capacitance is 1015pF @ 400V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 650V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IPB60R210CFD7ATMA1 Features
a 650V drain to source voltage (Vdss)
IPB60R210CFD7ATMA1 Applications
There are a lot of Infineon Technologies
IPB60R210CFD7ATMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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