IPB60R170CFD7ATMA1
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- Mfr.Part #
- IPB60R170CFD7ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO263-3-2
- Stock
- 20,908
- In Stock ：
- 20,908
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Technology :
- MOSFET (Metal Oxide)
- Supplier Device Package :
- PG-TO263-3-2
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Drain to Source Voltage (Vdss) :
- 600 V
- Product Status :
- Active
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1190 pF @ 400 V
- Current - Continuous Drain (Id) @ 25°C :
- 14A (Tc)
- FET Feature :
- -
- Vgs(th) (Max) @ Id :
- 4.5V @ 300µA
- Power Dissipation (Max) :
- 75W (Tc)
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 170mOhm @ 6A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 28 nC @ 10 V
- Mounting Type :
- Surface Mount
- Datasheets
- IPB60R170CFD7ATMA1
N-Channel 170m Ω @ 6A, 10V ±20V 1190pF @ 400V 28nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB60R170CFD7ATMA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1190pF @ 400V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IPB60R170CFD7ATMA1 Features
a 600V drain to source voltage (Vdss)
IPB60R170CFD7ATMA1 Applications
There are a lot of Infineon Technologies
IPB60R170CFD7ATMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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