FDFM2P110

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Mfr.Part #
FDFM2P110
Manufacturer
Fairchild Semiconductor
Package / Case
6-WDFN Exposed Pad
Datasheet
Download
Description
MOSFET P-CH 20V 3.5A MICROFET
Stock
20,265
In Stock :
20,265

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
4 nC @ 4.5 V
FET Type :
P-Channel
Operating Temperature :
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds :
280 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
FET Feature :
Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs :
140mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Vgs (Max) :
±12V
Mounting Type :
Surface Mount
Power Dissipation (Max) :
2W (Ta)
Product Status :
Active
Supplier Device Package :
MicroFET 3x3mm
Current - Continuous Drain (Id) @ 25°C :
3.5A (Ta)
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20 V
Package / Case :
6-WDFN Exposed Pad
Datasheets
FDFM2P110
VESS Electronics offers Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDFM2P110, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Package / Case:6-WDFN Exposed Pad, FDFM2P110 pinout, FDFM2P110 datasheet PDF, FDFM2P110 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDFM2P110 ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

P-Channel Tape & Reel (TR) 140m Ω @ 3.5A, 4.5V ±12V 280pF @ 10V 4nC @ 4.5V 6-WDFN Exposed Pad

FDFM2P110 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 280pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 11 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.

FDFM2P110 Features


a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 11 ns


FDFM2P110 Applications


There are a lot of ON Semiconductor
FDFM2P110 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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