FDFM2N111
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- Mfr.Part #
- FDFM2N111
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 6-WDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 4A MICROFET
- Stock
- 23,486
- In Stock ：
- 23,486
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- Schottky Diode (Isolated)
- Input Capacitance (Ciss) (Max) @ Vds :
- 273 pF @ 10 V
- Gate Charge (Qg) (Max) @ Vgs :
- 3.8 nC @ 4.5 V
- Technology :
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) :
- 20 V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs :
- 100mOhm @ 4A, 4.5V
- Drive Voltage (Max Rds On, Min Rds On) :
- 2.5V, 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 4A (Ta)
- FET Type :
- N-Channel
- Package / Case :
- 6-WDFN Exposed Pad
- Vgs (Max) :
- ±12V
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- MicroFET 3x3mm
- Product Status :
- Active
- Power Dissipation (Max) :
- 1.7W (Ta)
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Datasheets
- FDFM2N111
N-Channel Tape & Reel (TR) 100m Ω @ 4A, 4.5V ±12V 273pF @ 10V 3.8nC @ 4.5V 6-WDFN Exposed Pad
FDFM2N111 Overview
The maximum input capacitance of this device is 273pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 4A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.As shown in the table below, the drain current of this device is 4A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 11 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.
FDFM2N111 Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 11 ns
FDFM2N111 Applications
There are a lot of ON Semiconductor
FDFM2N111 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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