FDD5N50UTM
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- Mfr.Part #
- FDD5N50UTM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- -
- Datasheet
- Download
- Description
- 3A, 500V, 2OHM, N-CHANNEL MOSFET
- Stock
- 20,969
- In Stock ：
- 20,969
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- -
- Technology :
- -
- Operating Temperature :
- -
- Drive Voltage (Max Rds On, Min Rds On) :
- -
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- -
- Supplier Device Package :
- -
- Package / Case :
- -
- Current - Continuous Drain (Id) @ 25°C :
- -
- Power Dissipation (Max) :
- -
- FET Type :
- -
- Vgs (Max) :
- -
- Rds On (Max) @ Id, Vgs :
- -
- Gate Charge (Qg) (Max) @ Vgs :
- -
- FET Feature :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Drain to Source Voltage (Vdss) :
- -
- Datasheets
- FDD5N50UTM
N-Channel Tape & Reel (TR) 2 Ω @ 1.5A, 10V ±30V 650pF @ 25V 15nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5N50UTM-WS Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 275 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 650pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Drain current refers to the maximum continuous current a device can conduct, and it is 3A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 27 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FDD5N50UTM-WS Features
the avalanche energy rating (Eas) is 275 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 27 ns
FDD5N50UTM-WS Applications
There are a lot of ON Semiconductor
FDD5N50UTM-WS applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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