FDD5670
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- Mfr.Part #
- FDD5670
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 35,739
- In Stock ：
- 35,739
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 73 nC @ 10 V
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 52A (Ta)
- FET Feature :
- -
- Rds On (Max) @ Id, Vgs :
- 15mOhm @ 10A, 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation (Max) :
- 3.8W (Ta), 83W (Tc)
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- TO-252, (D-Pak)
- Technology :
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2739 pF @ 15 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- Drain to Source Voltage (Vdss) :
- 60 V
- Datasheets
- FDD5670
N-Channel Tape & Reel (TR) 15m Ω @ 10A, 10V ±20V 2739pF @ 15V 73nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD5670 Description
FDD5670 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON), and fast switching speed. Extremely low RDS(ON) in a small package.
FDD5670 Features
-
Low gate charge
-
Fast switching
-
High-performance trench technology for extremely low RDS(ON)
-
52 A, 60 V
FDD5670 Applications
-
DC/DC converter
-
Motor drives
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