FDC658AP
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- Mfr.Part #
- FDC658AP
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 40,142
- In Stock ：
- 40,142
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 470 pF @ 15 V
- Technology :
- MOSFET (Metal Oxide)
- FET Feature :
- -
- Vgs (Max) :
- ±25V
- Power Dissipation (Max) :
- 1.6W (Ta)
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C :
- 4A (Ta)
- Drain to Source Voltage (Vdss) :
- 30 V
- Gate Charge (Qg) (Max) @ Vgs :
- 8.1 nC @ 5 V
- Product Status :
- Active
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 50mOhm @ 4A, 10V
- Supplier Device Package :
- SuperSOT™-6
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Datasheets
- FDC658AP
P-Channel Tape & Reel (TR) 50m Ω @ 4A, 10V ±25V 470pF @ 15V 8.1nC @ 5V 30V SOT-23-6 Thin, TSOT-23-6
FDC658AP Description
FDC658AP P-Channel Logic Level MOSFET is produced using the ON Semiconductor's advanced PowerTrench process. It has been optimized for battery power management applications.
FDC658AP Features
-
Low Gate Charge
-
Max rDS(on) = 50 m@ VGS = -10 V, ID = -4A
-
Max rDS(on) = 75 m@ VGS = -4.5 V, ID = -3.4A
-
High-performance trench technology for extremely low rDS(on) RoHS Compliant
FDC658AP Applications
-
Load switch
-
Battery protection
-
DC/DC conversion
-
Battery management
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