FDC606P
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- Mfr.Part #
- FDC606P
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 13,024
- In Stock ：
- 13,024
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Technology :
- MOSFET (Metal Oxide)
- Power Dissipation (Max) :
- 1.6W (Ta)
- Product Status :
- Active
- Vgs (Max) :
- ±8V
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 26mOhm @ 6A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 25 nC @ 4.5 V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Input Capacitance (Ciss) (Max) @ Vds :
- 1699 pF @ 6 V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Current - Continuous Drain (Id) @ 25°C :
- 6A (Ta)
- FET Feature :
- -
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Supplier Device Package :
- SuperSOT™-6
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.8V, 4.5V
- Drain to Source Voltage (Vdss) :
- 12 V
- Datasheets
- FDC606P
P-Channel Tape & Reel (TR) 26m Ω @ 6A, 4.5V ±8V 1699pF @ 6V 25nC @ 4.5V 12V SOT-23-6 Thin, TSOT-23-6
FDC606P Description
The low voltage PowerTrench technology is used in the FDC606P P-Channel 1.8V MOSFET. The FDC606P MOSFET has been designed with battery power control in mind.
FDC606P Features
-
-6 A, -12V
-
RDS(on) = 26 mΩ@ VGS = -4.5 V
-
RDS(on) = 35 mΩ@ VGS = -2.5 V
-
RDS(on) = 53 mΩ@ VGS = -1.8 V
-
Fast switching speed
-
High power and current handling capability
FDC606P Applications
-
Battery management
-
Load switch
-
Battery protection
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