BD648-S
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- Mfr.Part #
- BD648-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 8A TO220
- Stock
- 12,410
- In Stock ：
- 12,410
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A, 3V
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- Current - Collector Cutoff (Max) :
- 500µA
- Transistor Type :
- PNP - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 50mA, 5A
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Mounting Type :
- Through Hole
- Product Status :
- Obsolete
- Supplier Device Package :
- TO-220
- Power - Max :
- 2 W
- Frequency - Transition :
- -
- Current - Collector (Ic) (Max) :
- 8 A
- Datasheets
- BD648-S
PNP - Darlington -65°C~150°C TJ 500μA 1 Elements TO-220-3 Tube Through Hole
BD648-S Overview
In this device, the DC current gain is 750 @ 3A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 2.5V @ 50mA, 5A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Supplier device package TO-220 comes with the product.The device exhibits a collector-emitter breakdown at 80V.Maximum collector currents can be below 8A volts.
BD648-S Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V
the supplier device package of TO-220
BD648-S Applications
There are a lot of Bourns Inc.
BD648-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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