BD645-S
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- Mfr.Part #
- BD645-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220
- Stock
- 47,742
- In Stock ：
- 47,742
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 50mA, 5A
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A, 3V
- Current - Collector Cutoff (Max) :
- 500µA
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN - Darlington
- Supplier Device Package :
- TO-220
- Power - Max :
- 2 W
- Product Status :
- Obsolete
- Frequency - Transition :
- -
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max) :
- 8 A
- Datasheets
- BD645-S
NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BD645-S Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2.5V @ 50mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 8A volts is possible.
BD645-S Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 50mA, 5A
the emitter base voltage is kept at 5V
BD645-S Applications
There are a lot of Bourns Inc.
BD645-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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