BC856B
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- Mfr.Part #
- BC856B
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 PNP 0.2W -0.1A -80V Trans
- Stock
- 30,000
- In Stock ：
- 30,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 150 mW
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA, 5V
- Frequency - Transition :
- 100MHz
- Operating Temperature :
- -55°C ~ 150°C
- Transistor Type :
- PNP
- Supplier Device Package :
- SOT-23
- Voltage - Collector Emitter Breakdown (Max) :
- 65 V
- Product Status :
- Active
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector (Ic) (Max) :
- 100 mA
- Datasheets
- BC856B
PNP -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC856B-7-F Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.200MHz is present in the transition frequency.An input voltage of 45V volts is the breakdown voltage.The device exhibits a collector-emitter breakdown at 65V.Maximum collector currents can be below -100mA volts.
BC856B-7-F Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
BC856B-7-F Applications
There are a lot of Diodes Incorporated
BC856B-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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