BC850B
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- Mfr.Part #
- BC850B
- Manufacturer
- Diotec Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 30,000
- In Stock ：
- 30,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA, 5V
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 100 mA
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Product Status :
- Active
- Frequency - Transition :
- 300MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector Cutoff (Max) :
- 15nA (ICBO)
- Power - Max :
- 250 mW
- Datasheets
- BC850B
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC850B,215 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.A transition frequency of 100MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC850B,215 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 100MHz
BC850B,215 Applications
There are a lot of Nexperia USA Inc.
BC850B,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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