2SAR564F3TR
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- Mfr.Part #
- 2SAR564F3TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 80V 4A HUML2020L3
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA, 3V
- Operating Temperature :
- 150°C (TJ)
- Power - Max :
- 1 W
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 220MHz
- Supplier Device Package :
- HUML2020L3
- Current - Collector Cutoff (Max) :
- 1µA (ICBO)
- Current - Collector (Ic) (Max) :
- 4 A
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Transistor Type :
- PNP
- Package / Case :
- 3-UDFN Exposed Pad
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 100mA, 2A
- Product Status :
- Active
- Datasheets
- 2SAR564F3TR
PNP 150°C (TJ) 1μA (ICBO) 3-UDFN Exposed Pad Cut Tape Surface Mount
2SAR564F3TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA, 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 360mV @ 100mA, 2A.Continuous collector voltages of 4A should be maintained to achieve high efficiency.Parts of this part have transition frequencies of 220MHz.HUML2020L3 is the supplier device package for this product.This device displays a 80 V maximum voltage - Collector Emitter Breakdown.
2SAR564F3TR Features
the DC current gain for this device is 120 @ 500mA, 3V
the vce saturation(Max) is 360mV @ 100mA, 2A
a transition frequency of 220MHz
the supplier device package of HUML2020L3
2SAR564F3TR Applications
There are a lot of Rohm Semiconductor
2SAR564F3TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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