2SAR293PHZGT100
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- Mfr.Part #
- 2SAR293PHZGT100
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A SOT89
- Stock
- 1,940
- In Stock ：
- 1,940
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1 A
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Power - Max :
- 500 mW
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA, 2V
- Package / Case :
- TO-243AA
- Operating Temperature :
- 150°C (TJ)
- Product Status :
- Active
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 320MHz
- Supplier Device Package :
- SOT-89
- Voltage - Collector Emitter Breakdown (Max) :
- 30 V
- Datasheets
- 2SAR293PHZGT100
PNP 150°C (TJ) 100nA (ICBO) SOT-89-3 Tape & Reel, Tray Package Surface Mount
2SAR293PHZGT100 Overview
In this device, the DC current gain is 270 @ 100mA, 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 25mA, 500mA.Maintaining the continuous collector voltage at 1A is essential for high efficiency.320MHz is present in the transition frequency.Supplier device package SOT-89 comes with the product.The device exhibits a collector-emitter breakdown at 30 V.
2SAR293PHZGT100 Features
the DC current gain for this device is 270 @ 100mA, 2V
the vce saturation(Max) is 350mV @ 25mA, 500mA
a transition frequency of 320MHz
the supplier device package of SOT-89
2SAR293PHZGT100 Applications
There are a lot of ROHM Semiconductor
2SAR293PHZGT100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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