ZXTP2012ASTOA

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Mfr.Part #
ZXTP2012ASTOA
Manufacturer
Diodes Incorporated
Package / Case
E-Line-3
Datasheet
Download
Description
TRANS PNP 60V 3.5A E-LINE
Stock
8,000
In Stock :
8,000

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Frequency - Transition :
120MHz
Product Status :
Obsolete
Power - Max :
1 W
Current - Collector Cutoff (Max) :
20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic :
210mV @ 400mA, 4A
Voltage - Collector Emitter Breakdown (Max) :
60 V
Operating Temperature :
-55°C ~ 150°C (TJ)
Supplier Device Package :
E-Line (TO-92 compatible)
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A, 1V
Package / Case :
E-Line-3
Current - Collector (Ic) (Max) :
3.5 A
Datasheets
ZXTP2012ASTOA
VESS Electronics offers Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP2012ASTOA, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Through Hole, Package / Case:E-Line-3, ZXTP2012ASTOA pinout, ZXTP2012ASTOA datasheet PDF, ZXTP2012ASTOA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTP2012ASTOA ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

PNP -55°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP E-Line-3 Tape & Reel (TR) Through Hole

ZXTP2012ASTOA Overview


In this device, the DC current gain is 100 @ 1A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -210mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 210mV @ 400mA, 4A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -3.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 120MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3.5A volts at Single BJT transistors maximum.

ZXTP2012ASTOA Features


the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is -3.5A
a transition frequency of 120MHz


ZXTP2012ASTOA Applications


There are a lot of Diodes Incorporated
ZXTP2012ASTOA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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