TIP33C
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- Mfr.Part #
- TIP33C
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-218-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 10A TO218
- Stock
- 15,107
- In Stock ：
- 15,107
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Package / Case :
- TO-218-3
- Frequency - Transition :
- 3MHz
- Current - Collector Cutoff (Max) :
- -
- Mounting Type :
- Through Hole
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 3A, 4V
- Vce Saturation (Max) @ Ib, Ic :
- -
- Product Status :
- Obsolete
- Power - Max :
- 80 W
- Transistor Type :
- NPN
- Supplier Device Package :
- TO-218
- Current - Collector (Ic) (Max) :
- 10 A
- Datasheets
- TIP33C
NPN -65°C~150°C TJ 700μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
TIP33CG Overview
This device has a DC current gain of 20 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 4V @ 2.5A, 10A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 10A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 3MHz.A maximum collector current of 10A volts is possible.
TIP33CG Features
the DC current gain for this device is 20 @ 3A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 4V @ 2.5A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz
TIP33CG Applications
There are a lot of ON Semiconductor
TIP33CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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