TIP116
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- Mfr.Part #
- TIP116
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 2A TO220-3
- Stock
- 500
- In Stock ：
- 500
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 50 W
- Current - Collector Cutoff (Max) :
- 2mA
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 2 A
- Supplier Device Package :
- TO-220-3
- Product Status :
- Active
- Package / Case :
- TO-220-3
- Frequency - Transition :
- 25MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A, 4V
- Transistor Type :
- PNP - Darlington
- Operating Temperature :
- -65°C ~ 150°C (TJ)
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Datasheets
- TIP116
PNP - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP116G Overview
This device has a DC current gain of 1000 @ 1A 4V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -2A.The maximum collector current is 2A volts.
TIP116G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
TIP116G Applications
There are a lot of ON Semiconductor
TIP116G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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