STD55N4F5

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Mfr.Part #
STD55N4F5
Manufacturer
STMicroelectronics
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 40V 55A DPAK
Stock
17,229
In Stock :
17,229

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
55A (Tc)
FET Feature :
-
Power Dissipation (Max) :
60W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
25 nC @ 10 V
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On) :
10V
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
40 V
Input Capacitance (Ciss) (Max) @ Vds :
1600 pF @ 25 V
Rds On (Max) @ Id, Vgs :
8.5mOhm @ 27.5A, 10V
Operating Temperature :
-55°C ~ 175°C (TJ)
Product Status :
Obsolete
Technology :
MOSFET (Metal Oxide)
FET Type :
N-Channel
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package :
DPAK
Datasheets
STD55N4F5
VESS Electronics offers Transistors - FETs, MOSFETs - Single STMicroelectronics STD55N4F5, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 175°C (TJ), Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, STD55N4F5 pinout, STD55N4F5 datasheet PDF, STD55N4F5 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STD55N4F5 ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Tape & Reel (TR) 8.5m Ω @ 27.5A, 10V ±20V 1600pF @ 25V 25nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

STD55N4F5 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1600pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 25 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 220A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).

STD55N4F5 Features


a continuous drain current (ID) of 55A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 220A.


STD55N4F5 Applications


There are a lot of STMicroelectronics
STD55N4F5 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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