SS8550CTA

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Mfr.Part #
SS8550CTA
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet
Download
Description
TRANS PNP 25V 1.5A TO92-3
Stock
41,884
In Stock :
41,884

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
150°C (TJ)
Transistor Type :
PNP
Current - Collector Cutoff (Max) :
100nA (ICBO)
Mounting Type :
Through Hole
Power - Max :
1 W
Current - Collector (Ic) (Max) :
1.5 A
Product Status :
Active
Voltage - Collector Emitter Breakdown (Max) :
25 V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 80mA, 800mA
Frequency - Transition :
200MHz
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 100mA, 1V
Supplier Device Package :
TO-92-3
Datasheets
SS8550CTA
VESS Electronics offers Transistors - Bipolar (BJT) - Single onsemi SS8550CTA, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Operating Temperature:150°C (TJ), Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads, SS8550CTA pinout, SS8550CTA datasheet PDF, SS8550CTA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SS8550CTA ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

SS8550CTA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -280mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 80mA, 800mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 1.5A volts.

SS8550CTA Features


the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz


SS8550CTA Applications


There are a lot of ON Semiconductor
SS8550CTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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