SI8802DB-T2-E1

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Mfr.Part #
SI8802DB-T2-E1
Manufacturer
Vishay
Package / Case
4-XFBGA
Datasheet
Download
Description
MOSFET N-CH 8V 4MICROFOOT
Stock
5,885
In Stock :
5,885

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
FET Feature :
-
Vgs(th) (Max) @ Id :
700mV @ 250µA
FET Type :
N-Channel
Operating Temperature :
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C :
3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds :
-
Drive Voltage (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
54mOhm @ 1A, 4.5V
Mounting Type :
Surface Mount
Gate Charge (Qg) (Max) @ Vgs :
6.5 nC @ 4.5 V
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±5V
Drain to Source Voltage (Vdss) :
8 V
Supplier Device Package :
4-Microfoot
Package / Case :
4-XFBGA
Power Dissipation (Max) :
500mW (Ta)
Datasheets
SI8802DB-T2-E1
VESS Electronics offers Transistors - FETs, MOSFETs - Single Vishay SI8802DB-T2-E1, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Operating Temperature:-55°C ~ 150°C (TJ), Mounting Type:Surface Mount, Package / Case:4-XFBGA, SI8802DB-T2-E1 pinout, SI8802DB-T2-E1 datasheet PDF, SI8802DB-T2-E1 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI8802DB-T2-E1 ,we also present a selection of EPC2019, EPC2053, EPC2015C, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

N-Channel Digi-Reel® 54m Ω @ 1A, 4.5V ±5V 6.5nC @ 4.5V 4-XFBGA

SI8802DB-T2-E1 Overview


In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 8V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 8V.As a result of its turn-off delay time, which is 22 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 5VV.In addition to reducing power consumption, this device uses drive voltage (1.2V 4.5V).

SI8802DB-T2-E1 Features


a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of 8V voltage
the turn-off delay time is 22 ns


SI8802DB-T2-E1 Applications


There are a lot of Vishay Siliconix
SI8802DB-T2-E1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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