RN1305,LF

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Mfr.Part #
RN1305,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS PREBIAS NPN 50V 0.1A USM
Stock
5,175
In Stock :
5,175

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
Supplier Device Package :
SC-70
Mounting Type :
Surface Mount
Product Status :
Active
Package / Case :
SC-70, SOT-323
Current - Collector (Ic) (Max) :
100 mA
Current - Collector Cutoff (Max) :
500nA
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Resistor - Emitter Base (R2) :
47 kOhms
Voltage - Collector Emitter Breakdown (Max) :
50 V
Frequency - Transition :
250 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Resistor - Base (R1) :
2.2 kOhms
Transistor Type :
NPN - Pre-Biased
Power - Max :
100 mW
Datasheets
RN1305,LF
VESS Electronics offers Transistors - Bipolar (BJT) - Single, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN1305,LF, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Mounting Type:Surface Mount, Package / Case:SC-70, SOT-323, RN1305,LF pinout, RN1305,LF datasheet PDF, RN1305,LF amp .Beyond Transistors - Bipolar (BJT) - Single, Pre-Biased Toshiba Electronic Devices and Storage Corporation RN1305,LF ,we also present a selection of MMUN2211LT1G, MMUN2214LT1G, MMUN2233LT1G, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

RN1305,LF datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Toshiba Semiconductor and Storage stock available at

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