NTE268
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- Mfr.Part #
- NTE268
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-202 Long Tab
- Datasheet
- Download
- Description
- TRANS NPN DARL 50V 2A TO202
- Stock
- 192
- In Stock ：
- 192
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- TO-202
- Power - Max :
- 1.67 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 200mA, 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-202 Long Tab
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Product Status :
- Active
- Current - Collector (Ic) (Max) :
- 2 A
- Current - Collector Cutoff (Max) :
- 500nA
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 3mA, 1.5A
- Transistor Type :
- NPN - Darlington
- Frequency - Transition :
- -
- Datasheets
- NTE268
NPN 150°C (TJ) 1mA TO-3P-3 Full Pack Through Hole
NTE2680 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 7 @ 500mA, 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 1.25A, 5A.The emitter base voltage can be kept at 8 V for high efficiency.This product comes in a TO-3P(H)IS device package from the supplier.Device displays Collector Emitter Breakdown (800 V maximal voltage).Single BJT transistor is possible to have a collector current as low as 8 A volts at Single BJT transistors maximum.
NTE2680 Features
the DC current gain for this device is 7 @ 500mA, 5V
the vce saturation(Max) is 3V @ 1.25A, 5A
the emitter base voltage is kept at 8 V
the supplier device package of TO-3P(H)IS
NTE2680 Applications
There are a lot of NTE Electronics, Inc
NTE2680 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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