NTE2327
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- Mfr.Part #
- NTE2327
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 450V 0.5A TO126
- Stock
- 196
- In Stock ：
- 196
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 500 mA
- Supplier Device Package :
- TO-126
- Frequency - Transition :
- 20MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA, 5V
- Voltage - Collector Emitter Breakdown (Max) :
- 450 V
- Transistor Type :
- NPN
- Power - Max :
- 20 W
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100µA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 20mA, 200mA
- Product Status :
- Active
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-225AA, TO-126-3
- Datasheets
- NTE2327
NPN 150°C (TJ) 100μA 1 Elements SILICON NPN TO-225AA, TO-126-3 Through Hole
NTE2327 Overview
In this device, the DC current gain is 50 @ 50mA, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 20mA, 200mA.Supplier device package TO-126 comes with the product.Voltage of maximal collector-emitter is set to 450 V.The device exhibits a collector-emitter breakdown at 450 V.
NTE2327 Features
the DC current gain for this device is 50 @ 50mA, 5V
the vce saturation(Max) is 1V @ 20mA, 200mA
the supplier device package of TO-126
NTE2327 Applications
There are a lot of NTE Electronics, Inc
NTE2327 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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