NSS1C201LT1G
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- Mfr.Part #
- NSS1C201LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 2A SOT23-3
- Stock
- 122
- In Stock ：
- 122
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Collector (Ic) (Max) :
- 2 A
- Transistor Type :
- NPN
- Power - Max :
- 490 mW
- Mounting Type :
- Surface Mount
- Product Status :
- Active
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 200mA, 2A
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Frequency - Transition :
- 110MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA, 2V
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Voltage - Collector Emitter Breakdown (Max) :
- 100 V
- Datasheets
- NSS1C201LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
NSS1C201LT1G Overview
In this device, the DC current gain is 120 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 150mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 150mV @ 200mA, 2A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.110MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
NSS1C201LT1G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 150mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 110MHz
NSS1C201LT1G Applications
There are a lot of ON Semiconductor
NSS1C201LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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