MMUN2112LT1G
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- Mfr.Part #
- MMUN2112LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS PNP 50V SOT23-3
- Stock
- 48,562
- In Stock ：
- 48,562
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Power - Max :
- 246 mW
- Current - Collector (Ic) (Max) :
- 100 mA
- Resistor - Base (R1) :
- 22 kOhms
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max) :
- 500nA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Product Status :
- Active
- Resistor - Emitter Base (R2) :
- 22 kOhms
- Transistor Type :
- PNP - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 5mA, 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- -
- Datasheets
- MMUN2112LT1G
MMUN2112LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
MMUN2112LT1G Description
The ON Semiconductor MMUN2112LT1G is designed to replace a single device and its external resistor bias network.
MMUN2112LT1G Features
-
Simplifies Circuit Design
-
Reduces Board Space
-
Reduces Component Count
-
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
MMUN2112LT1G Applications
Low Power Applications
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