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  5. MMBT5551LT1G
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    MMBT5551LT1G

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    Mfr.Part #
    MMBT5551LT1G
    Manufacturer
    onsemi
    Package / Case
    TO-236-3, SC-59, SOT-23-3
    Datasheet
    Download
    Description
    TRANS NPN 160V 0.6A SOT23-3
    Stock
    33,393
    In Stock ：
    33,393

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    Manufacturer :
    onsemi
    Product Category :
    Transistors - Bipolar (BJT) - Single
    Frequency - Transition :
    -
    Supplier Device Package :
    SOT-23-3 (TO-236)
    Transistor Type :
    NPN
    Current - Collector (Ic) (Max) :
    600 mA
    Package / Case :
    TO-236-3, SC-59, SOT-23-3
    Current - Collector Cutoff (Max) :
    100nA
    Vce Saturation (Max) @ Ib, Ic :
    200mV @ 5mA, 50mA
    Mounting Type :
    Surface Mount
    Operating Temperature :
    -55°C ~ 150°C (TJ)
    Voltage - Collector Emitter Breakdown (Max) :
    160 V
    DC Current Gain (hFE) (Min) @ Ic, Vce :
    80 @ 10mA, 5V
    Product Status :
    Active
    Power - Max :
    225 mW
    Datasheets
    MMBT5551LT1G
    VESS Electronics offers Transistors - Bipolar (BJT) - Single onsemi MMBT5551LT1G, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Package / Case：TO-236-3, SC-59, SOT-23-3, Mounting Type：Surface Mount, Operating Temperature：-55°C ~ 150°C (TJ), MMBT5551LT1G pinout, MMBT5551LT1G datasheet PDF, MMBT5551LT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MMBT5551LT1G ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

    NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON N-CHANNEL TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

    MMBT5551LT1G Description


    The MMBT5551LT1G is an NPN Silicon High Voltage Transistor developed for applications that require specific site and control changes. According to the MMBT5551LT1G datasheet, this transistor is PPAP capable and AEC-Q101 qualified. The NPN Bipolar High Voltage Transistor is intended for general-purpose switching applications. The MMBT5551LT1G is packaged in a SOT-23 package, which is also intended for low-power surface mount applications.



    MMBT5551LT1G Features


    • Pb?Free Devices are available

    • Collector-Emitter Breakdown Voltage 160 V

    • Miniature SOT-23 Surface Mount Package Saves Board Space>

    • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

    • Pb?Free, Halogen Free/BFR Free and are RoHS Compliant



    MMBT5551LT1G Applications


    • Industrial

    • Automotive

    • Switching applications

    • Lower power surface mount applications


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