MMBT4403
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- Mfr.Part #
- MMBT4403
- Manufacturer
- YANGJIE
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SOT-23 PNP 0.3W -0.6A -40V Trans
- Stock
- 15,000
- In Stock ：
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 350 mW
- Operating Temperature :
- -55°C ~ 150°C
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 50mA, 500mA
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 2V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- PNP
- Supplier Device Package :
- SOT-23
- Current - Collector (Ic) (Max) :
- 600 mA
- Product Status :
- Active
- Voltage - Collector Emitter Breakdown (Max) :
- 40 V
- Frequency - Transition :
- 200MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Datasheets
- MMBT4403
PNP -55°C~150°C TJ 100μA TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT4403-G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.The collector emitter saturation voltage is -400mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 15mA, 150mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -600mA for high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.A maximum collector current of 600mA volts can be achieved.
MMBT4403-G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at -5V
MMBT4403-G Applications
There are a lot of Comchip Technology
MMBT4403-G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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