MMBT4401

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Mfr.Part #
MMBT4401
Manufacturer
YANGJIE
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
SOT-23 NPN 0.3W 0.6A 60V Transis
Stock
15,000
In Stock :
15,000

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Manufacturer :
YANGJIE
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
100nA
Transistor Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
40 V
Current - Collector (Ic) (Max) :
600 mA
Supplier Device Package :
SOT-23
Product Status :
Active
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 150mA, 1V
Power - Max :
350 mW
Operating Temperature :
-55°C ~ 150°C
Vce Saturation (Max) @ Ib, Ic :
750mV @ 50mA, 500mA
Package / Case :
TO-236-3, SC-59, SOT-23-3
Frequency - Transition :
250MHz
Mounting Type :
Surface Mount
Datasheets
MMBT4401
VESS Electronics offers Transistors - Bipolar (BJT) - Single YANGJIE MMBT4401, where excellence in quality meets cost-effectiveness. This premier offering shines with its comprehensive list of features, including Operating Temperature:-55°C ~ 150°C, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, MMBT4401 pinout, MMBT4401 datasheet PDF, MMBT4401 amp .Beyond Transistors - Bipolar (BJT) - Single YANGJIE MMBT4401 ,we also present a selection of BC817-40,235, BC817-40,215, BC807-40,215, Our extensive stock is ready to fulfill your requirements. Connect with us now for tailored solutions.

NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

MMBT4401-7-F Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 600mA in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 250MHz.The breakdown input voltage is 40V volts.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.

MMBT4401-7-F Features


the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz


MMBT4401-7-F Applications


There are a lot of Diodes Incorporated
MMBT4401-7-F applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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